SPP80N06S2-08
SPP80N06S2-08 Datasheet
SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08
| Part | Datasheet |
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SPP80N06S2-08 |
SPP80N06S2-08 (pdf) |
| Related Parts | Information |
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SPI80N06S2-08 |
SPI80N06S2-08 |
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SPB80N06S2-08 |
SPB80N06S2-08 |
| PDF Datasheet Preview |
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| OptiMOS =Power-Transistor Feature N-Channel Enhancement mode operating temperature Avalanche rated dv/dt rated P- TO262 -3-1 SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 Product Summary RDS on P- TO263 -3-2 P- TO220 -3-1 Type SPP80N06S2-08 SPB80N06S2-08 SPI80N06S2-08 Package Ordering Code P- TO220 -3-1 Q67060-S4283 P- TO263 -3-2 Q67060-S4284 P- TO262 -3-1 Q67060-S7430 Marking 2N0608 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1 TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80 A , VDD=25V, RGS=25 IS=80A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 80 320 ±20 215 +175 55/175/56 Unit A kV/µs V W °C 2003-05-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 Values Unit min. typ. max. RthJC RthJA - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values |
| More datasheets: 3255-100 | 3255-050 | 3255-025 | 76650-0021 | MDM-51SH004B | SEP8736-003 | DAMM15PEK87 | DB-25S-F179A-A190-A197 | SPI80N06S2-08 | SPB80N06S2-08 |
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