SPB80N03S2L-06 G
SPB80N03S2L-06 G Datasheet
SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06
| Part | Datasheet |
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SPB80N03S2L-06 G |
SPB80N03S2L-06 G (pdf) |
| Related Parts | Information |
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SPP80N03S2L-06 |
SPP80N03S2L-06 |
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SPB80N03S2L-06 |
SPB80N03S2L-06 |
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SPB80N03S2L06T |
SPB80N03S2L06T |
SPI80N03S2L-06 |
SPI80N03S2L-06 |
| PDF Datasheet Preview |
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| SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS on • Excellent Gate Charge x RDS on product FOM • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated P- TO262 -3-1 Product Summary RDS on max. SMD version P- TO263 -3-2 P- TO220 -3-1 Type SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67042-S4088 Q67042-S4089 Q67042-S4092 Marking 2N03L06 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1 TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=20A, VDD=25V, IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 80 320 ±20 150 +175 55/175/56 Unit A kV/µs V W °C 2003-05-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 Values Unit min. typ. max. RthJC RthJA - 1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage |
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