IPU07N03LA

IPU07N03LA Datasheet

IPU07N03LA

Part	Datasheet
IPU07N03LA	IPU07N03LA (pdf)

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Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on • Superior thermal resistance • 175 °C operating temperature • dv /dt rated Product Summary V DS R DS on ,max ID IPU07N03LA 25 V 30 A P-TO2521-3-11 Type IPU07N03LA Package P-TO251-3-1 Ordering Code Marking Q67042-S4150 07N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C1 Pulsed drain current I D,pulse T C=100 °C T C=25 °C2 Avalanche energy, single pulse I D=30 A, R GS=25 dv /dt I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage3 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 30 210 375 ±20 83 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2003-02-06 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area4 IPU07N03LA min. Values typ. Unit max. Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance V BR DSS V GS=0 V, I D=1 mA V GS th V DS=V GS, I D=40 µA I DSS

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Power-Transistor

Features
• Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x R DS on product FOM
• Very low on-resistance R DS on
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated

Product Summary V DS R DS on ,max ID

IPU07N03LA
25 V 30 A

P-TO2521-3-11

Type IPU07N03LA

Package P-TO251-3-1
Ordering Code Marking Q67042-S4150 07N03LA

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C1

Pulsed drain current

I D,pulse

T C=100 °C T C=25 °C2

Avalanche energy, single pulse

I D=30 A, R GS=25
dv /dt

I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C

Gate source voltage3

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

Value 30 210 375
±20 83 -55 175 55/175/56

Unit A
mJ kV/µs V W °C
2003-02-06

Parameter

Symbol Conditions

Thermal characteristics

Thermal resistance, junction - case SMD version, device on PCB

R thJC R thJA
minimal footprint 6 cm2 cooling area4

IPU07N03LA
min.

Values typ.

Unit max.

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current

Gate-source leakage current Drain-source on-state resistance

Gate resistance Transconductance

V BR DSS V GS=0 V, I D=1 mA

V GS th V DS=V GS, I D=40 µA

I DSS

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Datasheet ID: IPU07N03LA 638257