IPI90R800C3

IPI90R800C3 Datasheet

IPI90R800C3

Part	Datasheet
IPI90R800C3	IPI90R800C3 (pdf)

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CoolMOS Power Transistor Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1 for target applications • Pb-free lead plating RoHS compliant • Ultra low gate charge Product Summary V DS T J=25°C R DS on ,max T J= 25°C Q g,typ IPI90R800C3 900 V 42 nC PG-TO262 CoolMOS 900V is designed for • Quasi Resonant Flyback / Forward topologies • PC Silverbox and consumer applications • Industrial SMPS Type IPI90R800C3 Package PG-TO262 Marking 9R800C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C Pulsed drain current2 I D,pulse T C=100 °C T C=25 °C Avalanche energy, single pulse Avalanche energy, repetitive 2 ,3 AR Avalanche current, repetitive 2 ,3 AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt I D=1.4 A, V DD=50 V I D=1.4 A, V DD=50 V V DS=0...400 V Gate source voltage static AC f>1 Hz Power dissipation P tot T C=25 °C Operating and storage temperature T J, T stg Value 15 157 50 ±20 ±30 104 -55 150 Unit A

PDF Datasheet Preview

CoolMOS Power Transistor

Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating RoHS compliant
• Ultra low gate charge

Product Summary V DS T J=25°C R DS on ,max T J= 25°C Q g,typ

IPI90R800C3
900 V 42 nC

PG-TO262

CoolMOS 900V is designed for
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS

Type IPI90R800C3

Package PG-TO262

Marking 9R800C

Maximum ratings, at T J=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C

Pulsed drain current2

I D,pulse

T C=100 °C T C=25 °C

Avalanche energy, single pulse

Avalanche
energy,
repetitive
2 ,3 AR

Avalanche
current,
repetitive
2 ,3 AR

MOSFET dv /dt ruggedness

E AS E AR I AR dv /dt

I D=1.4 A, V DD=50 V I D=1.4 A, V DD=50 V

V DS=0...400 V

Gate source voltage
static

AC f>1 Hz

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T J, T stg

Value 15 157 50 ±20 ±30 104
-55 150

Unit A

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Datasheet ID: IPI90R800C3 638229