IPG20N06S3L-23

IPG20N06S3L-23 Datasheet


IPG20N06S3L-23

Part Datasheet
IPG20N06S3L-23 IPG20N06S3L-23 IPG20N06S3L-23 (pdf)
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Power-Transistor

Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product RoHS compliant
• 100% Avalanche tested

IPG20N06S3L-23

Product Summary
5 DS on ,max
55 V 23 20 A

PG-TDSON-8-4

Type IPG20N06S3L-23

Package

Marking

PG-TDSON-8-4 3N06L23

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Continuous drain current1 one channel active

Conditions

T C=25 °C, V GS=10 V

T C=100 °C, V GS=10 V2

Pulsed drain current2 one channel active

Avalanche energy, single pulse2, 5 Avalanche current, single pulse5 Gate source voltage4

I D,pulse -

E AS I AS V GS

I D=10A -

Power dissipation one channel active

P tot

T C=25 °C

Operating and storage temperature T j, T stg -

IEC climatic category DIN IEC 68-1 -

Value

Unit
±16
-55 +175
55/175/56
2008-09-23

IPG20N06S3L-23

Parameter

Conditions

Thermal characteristics2

Thermal resistance, junction - case SMD version, device on PCB

R thJC R thJA
minimal footprint 6 cm2 cooling area3
min.
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Datasheet ID: IPG20N06S3L-23 638224