IPG20N06S3L-23
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IPG20N06S3L-23 (pdf) |
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Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product RoHS compliant • 100% Avalanche tested IPG20N06S3L-23 Product Summary 5 DS on ,max 55 V 23 20 A PG-TDSON-8-4 Type IPG20N06S3L-23 Package Marking PG-TDSON-8-4 3N06L23 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1 one channel active Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2 Pulsed drain current2 one channel active Avalanche energy, single pulse2, 5 Avalanche current, single pulse5 Gate source voltage4 I D,pulse - E AS I AS V GS I D=10A - Power dissipation one channel active P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category DIN IEC 68-1 - Value Unit ±16 -55 +175 55/175/56 2008-09-23 IPG20N06S3L-23 Parameter Conditions Thermal characteristics2 Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3 min. |
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