IPD180N10N3GBTMA1
IPD180N10N3GBTMA1 Datasheet
IPD180N10N3 G
| Part | Datasheet |
|---|---|
IPD180N10N3GBTMA1 |
IPD180N10N3GBTMA1 (pdf) |
| Related Parts | Information |
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IPD180N10N3GATMA1 |
IPD180N10N3GATMA1 |
| PDF Datasheet Preview |
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| IPD180N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on Product Summary VDS RDS on ,max TO-263 ID • 175 °C operating temperature • Pb-free lead plating RoHS compliant • Qualified according to JEDEC1 for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPD180N10N3 G 100 V 18 mW 43 A Package Marking PG-TO252-3 180N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2 T C=100 °C Pulsed drain current2 I D,pulse T C=25 °C Avalanche energy, single pulse I D=33 A, R GS=25 W Gate source voltage Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 1 J-STD20 and JESD22 2 See figure 3 Value Unit ±20 -55 175 55/175/56 2014-05-19 IPD180N10N3 G Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient |
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