IPD13N03LA G
IPD13N03LA G Datasheet
IPD13N03LA G IPF13N03LA G IPS13N03LA G IPU13N03LA G
| Part | Datasheet |
|---|---|
IPD13N03LA G |
IPD13N03LA G (pdf) |
| Related Parts | Information |
|---|---|
IPU13N03LA G |
IPU13N03LA G |
IPF13N03LA G |
IPF13N03LA G |
IPS13N03LA G |
IPS13N03LA G |
| PDF Datasheet Preview |
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| Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications • N-channel, logic level • Excellent gate charge x R DS on product FOM • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating RoHS compliant IPD13N03LA G IPF13N03LA G IPS13N03LA G IPU13N03LA G Product Summary V DS R DS on ,max ID 25 V 30 A Type IPD13N03LA IPF13N03LA IPS13N03LA IPU13N03LA Package Marking P-TO252-3-11 13N03LA P-TO252-3-23 13N03LA P-TO251-3-11 13N03LA P-TO251-3-1 13N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2 Pulsed drain current I D,pulse T C=100 °C T C=25 °C3 Avalanche energy, single pulse I D=24 A, R GS=25 dv /dt I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 30 210 60 ±20 46 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2008-04-14 Parameter Symbol Conditions IPD13N03LA G IPF13N03LA G IPS13N03LA G IPU13N03LA G |
| More datasheets: DF37B-40DS-0.4V(51) | DF37B-30DS-0.4V(75) | DF37B-30DS-0.4V(74) | DF37B-60DS-0.4V(51) | DF37B-10DS-0.4V(51) | DF37B-16DS-0.4V(53) | DCM21HA4PNK127 | 596-00335 | KT24-1A-40L-THT | IPU13N03LA G |
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