IPC80N04S403ATMA1
IPC80N04S403ATMA1 Datasheet
IPC80N04S4-03
| Part | Datasheet |
|---|---|
IPC80N04S403ATMA1 |
IPC80N04S403ATMA1 (pdf) |
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| OptiMOSTM-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • Green product RoHS compliant • 100% Avalanche tested • Feasible for automatic optical inspection AOI IPC80N04S4-03 Product Summary VDS RDS on ID 40 V 80 A PG-TDSON-8-23 Type IPC80N04S4-03 Package PG-TDSON-8-23 Marking 4N0403 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Conditions Continuous drain current Pulsed drain current2 Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage I D,pulse E AS I AS V GS T C=25°C, T J =175°C, V GS=10V T C=100 °C, T J =175°C, V GS=10 V T C=25 °C I D=40 A Power dissipation P tot T C=25 °C, T J =175°C Operating and storage temperature T j, T stg - Value 801 Unit A 671, 2 +/-20 -55 +1753 2015-05-22 IPC80N04S4-03 Parameter Conditions Thermal characteristics Thermal resistance, junction - case R thJC - min. Values typ. Unit max. Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V BR DSS V GS=0 V, I D= 1 mA Gate threshold voltage |
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