IPB04N03LAT
IPB04N03LAT Datasheet
IPB04N03LA G
| Part | Datasheet |
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IPB04N03LAT |
IPB04N03LAT (pdf) |
| Related Parts | Information |
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IPB04N03LA |
IPB04N03LA |
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IPB04N03LA G |
IPB04N03LA G |
| PDF Datasheet Preview |
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| Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications • N-channel - Logic level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on • Superior thermal resistance • 175 °C operating temperature • dv /dt rated • Pb-free lead plating RoHS compliant IPB04N03LA G Product Summary V DS R DS on ,max SMD version ID 25 V 80 A PG-TO263 Type IPB04N03LA G Package PG-TO263 Marking 04N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2 Pulsed drain current I D,pulse T C=100 °C T C=25 °C3 Avalanche energy, single pulse I D=77 A, R GS=25 dv /dt I D=80 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 1 J-STD20 and JESD22 Value 80 385 290 ±20 107 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2006-05-10 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5 IPB04N03LA G |
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