IPA028N08N3GXKSA1

IPA028N08N3GXKSA1 Datasheet

IPA028N08N3 G

Part	Datasheet
IPA028N08N3GXKSA1	IPA028N08N3GXKSA1 (pdf)

PDF Datasheet Preview
OptiMOS TM 3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS on product FOM • Very low on-resistance RDS on • N-channel, normal level • 100% avalanche tested • Pb-free plating RoHS compliant • Qualified according to JEDEC1 for target applications • Halogen-free according to IEC61249-2-21 Type IPA028N08N3 G IPA028N08N3 G Product Summary VDS RDS on ,max ID 80 V mW 89 A Package PG-TO-220-FP Marking 028N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current T C=25 °C2 T C=100 °C Pulsed drain current3 I D,pulse T C=25 °C Avalanche energy, single pulse4 I D=89 A, R GS=25 W 1430 Gate source voltage ±20 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg -55 175 IEC climatic category DIN IEC 68-1 55/175/56 1 J-STD20 and JESD22 2 Current is limited by package with an RthJC=0.5K/W in a standard TO-220 package the chip is able to carry 251A. 3 See figure 3 for more detailed information 4 See figure 13 for more detailed information Unit A mJ V W °C 2013-08-26 IPA028N08N3 G Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case R thJC

PDF Datasheet Preview

OptiMOS TM 3 Power-Transistor

Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS on product FOM
• Very low on-resistance RDS on
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating RoHS compliant
• Qualified according to JEDEC1 for target applications
• Halogen-free according to IEC61249-2-21

Type

IPA028N08N3 G

IPA028N08N3 G

Product Summary VDS RDS on ,max ID
80 V mW 89 A

Package

PG-TO-220-FP

Marking
028N08N

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Value

Continuous drain current

T C=25 °C2

T C=100 °C

Pulsed drain current3

I D,pulse T C=25 °C

Avalanche energy, single pulse4

I D=89 A, R GS=25 W
1430

Gate source voltage
±20

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg
-55 175

IEC climatic category DIN IEC 68-1
55/175/56
1 J-STD20 and JESD22 2 Current is limited by package with an RthJC=0.5K/W in a standard TO-220 package the chip is able to carry 251A.
3 See figure 3 for more detailed information 4 See figure 13 for more detailed information

Unit A
mJ V W °C
2013-08-26

IPA028N08N3 G

Parameter

Symbol Conditions

Thermal characteristics Thermal resistance, junction - case R thJC

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IPA028N08N3GXKSA1 Datasheet file may be downloaded here without warranties.

Datasheet ID: IPA028N08N3GXKSA1 638146