IPS105N03LGAKMA1

IPS105N03LGAKMA1 Datasheet

IPD105N03L G IPF105N03L G IPS105N03L G IPU105N03L G

Part	Datasheet
IPS105N03LGAKMA1	IPS105N03LGAKMA1 (pdf)

Related Parts	Information
IPU105N03L G	IPU105N03L G

PDF Datasheet Preview
Type Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1 for target applications • N-channel, logic level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on • Avalanche rated • Pb-free plating RoHS compliant IPD105N03L G IPF105N03L G IPS105N03L G IPU105N03L G Product Summary V DS R DS on ,max ID 30 V 35 A Type IPD105N03L G IPF105N03L G IPS105N03L G IPU105N03L G Package Marking PG-TO252-3-11 105N03L PG-TO252-3-23 105N03L PG-TO251-3-11 105N03L PG-TO251-3-21 105N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C I D,pulse I AS E AS dv /dt T C=25 °C T C=25 °C I D=12 A, R GS=25 I D=35 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C Value 35 33 35 27 245 35 30 ±20 Unit A mJ kV/µs V 2008-04-15 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C

PDF Datasheet Preview

Type

Power-Transistor

Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1 for target applications
• N-channel, logic level
• Excellent gate charge x R DS on product FOM
• Very low on-resistance R DS on
• Avalanche rated
• Pb-free plating RoHS compliant

IPD105N03L G IPF105N03L G IPS105N03L G IPU105N03L G

Product Summary V DS R DS on ,max ID
30 V 35 A

Type

IPD105N03L G

IPF105N03L G

IPS105N03L G

IPU105N03L G

Package Marking

PG-TO252-3-11 105N03L

PG-TO252-3-23 105N03L

PG-TO251-3-11 105N03L

PG-TO251-3-21 105N03L

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

V GS=10 V, T C=25 °C

V GS=10 V, T C=100 °C

V GS=4.5 V, T C=25 °C

V GS=4.5 V, T C=100 °C

I D,pulse I AS E AS
dv /dt

T C=25 °C

T C=25 °C

I D=12 A, R GS=25

I D=35 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C

Value 35 33 35 27 245 35 30
±20

Unit A
mJ kV/µs V
2008-04-15

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Power dissipation

P tot

T C=25 °C

More datasheets: 35266 | 35294 | 35016 | PH-1300K | 35293 | 35268 | 35292 | 35017 | MG06400D-BN4MM | IPU105N03L G

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IPS105N03LGAKMA1 Datasheet file may be downloaded here without warranties.

Datasheet ID: IPS105N03LGAKMA1 638134