IPI16CNE8N G

IPI16CNE8N G Datasheet

IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N G

Part	Datasheet
IPI16CNE8N G	IPI16CNE8N G (pdf)

Related Parts	Information
IPP16CNE8N G	IPP16CNE8N G
IPD16CNE8N G	IPD16CNE8N G

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IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N G OptiMOS 2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on Product Summary V DS R DS on ,max TO252 ID 85 V 16 53 A • 175 °C operating temperature • Pb-free lead plating RoHS compliant • Qualified according to JEDEC1 for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 * Type IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N G Package Marking PG-TO263-3 16CNE8N PG-TO252-3 16CNE8N PG-TO262-3 16CNE8N PG-TO220-3 16CNE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2 ID I D,pulse T C=25 °C T C=100 °C T C=25 °C Avalanche energy, single pulse I D=53 A, R GS=25 dv /dt I D=53 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C Gate source voltage3 Power dissipation Operating and storage temperature V GS P tot T j, T stg T C=25 °C IEC climatic category DIN IEC 68-1 1 J-STD20 and JESD22 2 see figure 3 Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V * Except D-PAK TO-252 Value 53 38 212 107 ±20 100 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2010-04-27 IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N G Parameter

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IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N G

OptiMOS 2 Power-Transistor

Features
• N-channel, normal level
• Excellent gate charge x R DS on product FOM
• Very low on-resistance R DS on

Product Summary V DS R DS on ,max TO252 ID
85 V 16 53 A
• 175 °C operating temperature
• Pb-free lead plating RoHS compliant
• Qualified according to JEDEC1 for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21 *

Type

IPB16CNE8N G

IPD16CNE8N G

IPI16CNE8N G

IPP16CNE8N G

Package Marking

PG-TO263-3 16CNE8N

PG-TO252-3 16CNE8N

PG-TO262-3 16CNE8N

PG-TO220-3 16CNE8N

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current Pulsed drain current2

ID I D,pulse

T C=25 °C T C=100 °C T C=25 °C

Avalanche energy, single pulse

I D=53 A, R GS=25
dv /dt

I D=53 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C

Gate source voltage3 Power dissipation Operating and storage temperature

V GS P tot T j, T stg

T C=25 °C

IEC climatic category DIN IEC 68-1
1 J-STD20 and JESD22 2 see figure 3 Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V * Except D-PAK TO-252

Value 53 38 212 107
±20 100 -55 175 55/175/56

Unit A
mJ kV/µs V W °C
2010-04-27

IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N G

Parameter

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Datasheet ID: IPI16CNE8NG 638104