IKW03N120H2FKSA1

IKW03N120H2FKSA1 Datasheet

IKP03N120H2 IKW03N120H2

Part	Datasheet
IKW03N120H2FKSA1	IKW03N120H2FKSA1 (pdf)

Related Parts	Information
IKP03N120H2XKSA1	IKP03N120H2XKSA1

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IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode • Designed for - SMPS - Lamp Ballast - ZVS-Converter • 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A • Qualified according to JEDEC2 for target applications • Pb-free lead plating RoHS compliant • Complete product spectrum and PSpice Models : PG-TO-247-3 PG-TO-220-3-1 Type Eoff Marking Package IKW03N120H2 1200V 3A 0.15mJ 150C K03H1202 PG-TO-247-3 IKP03N120H2 1200V 3A 0.15mJ 150°C K03H1202 PG-TO-220-3-1 Maximum Ratings Parameter Collector-emitter voltage Triangular collector current TC = 25C, f = 140kHz TC = 100C, f = 140kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Gate-emitter voltage Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, 1.6mm in. from case for 10s Symbol VCE IC ICpuls - VGE Ptot Tj , Tstg - Value Unit 1200 20 C 1 J-STD-020 and JESD-022 Power Semiconductors IKP03N120H2 IKW03N120H2 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction - case Thermal resistance, junction ambient Symbol RthJC RthJCD RthJA Conditions P-TO-220-3-1 P-TO-247-3-21 Max. Value Unit Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Conditions Static Characteristic

PDF Datasheet Preview

IKP03N120H2 IKW03N120H2

HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled

HE diode
• Designed for - SMPS
- Lamp Ballast - ZVS-Converter
• 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A
• Qualified according to JEDEC2 for target applications
• Pb-free lead plating RoHS compliant
• Complete product spectrum and PSpice Models :

PG-TO-247-3 PG-TO-220-3-1

Type

Eoff

Marking

Package

IKW03N120H2 1200V 3A 0.15mJ 150C K03H1202 PG-TO-247-3

IKP03N120H2 1200V 3A 0.15mJ 150°C K03H1202 PG-TO-220-3-1

Maximum Ratings

Parameter

Collector-emitter voltage Triangular collector current TC = 25C, f = 140kHz TC = 100C, f = 140kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Gate-emitter voltage Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, 1.6mm in. from case for 10s

Symbol VCE IC

ICpuls -

VGE Ptot

Tj , Tstg -

Value

Unit
1200
20
C
1 J-STD-020 and JESD-022

Power Semiconductors

IKP03N120H2 IKW03N120H2

Thermal Resistance

Parameter

Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction - case Thermal resistance, junction ambient

Symbol RthJC RthJCD RthJA

Conditions

P-TO-220-3-1 P-TO-247-3-21

Max. Value

Unit

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Parameter

Conditions

Static Characteristic

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Datasheet ID: IKW03N120H2FKSA1 638093