IHW30N90R

IHW30N90R Datasheet

IHW30N90R q

Part	Datasheet
IHW30N90R	IHW30N90R (pdf)

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Soft Switching Series IHW30N90R q Features • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE sat • Low EMI • Qualified according to JEDEC1 for target applications • Application specific optimisation of inverse diode • Pb-free lead plating RoHS compliant Applications • Microwave Oven • Soft Switching Applications for ZCS PG-TO-247-3 Type VCE sat ,Tj=25°C Tj,max IHW30N90R 900V 30A 1.5V 175°C Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 900V, Tj 175°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Transient Gate-emitter voltage tp < 5 ms Power dissipation, TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm in. from case for 10s Marking H30R90 Symbol VCE IC ICpuls IF IFpuls VGE Ptot Tj Tstg - Package PG-TO-247-3 Value 900 60 30 90 60 30 90 ±20 ±25 454 260 Unit V A V W °C °C 1 J-STD-020 and JESD-022 Power Semiconductors Soft Switching Series IHW30N90R q Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance, junction ambient Symbol RthJC RthJCD RthJA Conditions Max. Value Unit Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

PDF Datasheet Preview

Soft Switching Series

IHW30N90R q

Features
• 1.5V typical saturation voltage of IGBT
• Trench and Fieldstop technology for 900 V applications offers :
- very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive
temperature coefficient in VCE sat
• Low EMI
• Qualified according to JEDEC1 for target applications
• Application specific optimisation of inverse diode
• Pb-free lead plating RoHS compliant

Applications
• Microwave Oven
• Soft Switching Applications for ZCS

PG-TO-247-3

Type

VCE sat ,Tj=25°C

Tj,max

IHW30N90R 900V 30A
1.5V
175°C

Maximum Ratings

Parameter

Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 900V, Tj 175°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Transient Gate-emitter voltage tp < 5 ms

Power dissipation, TC = 25°C Operating junction temperature

Storage temperature Soldering temperature, 1.6mm in. from case for 10s

Marking H30R90

Symbol VCE IC

ICpuls IF

IFpuls VGE

Ptot Tj Tstg -

Package PG-TO-247-3

Value 900
60 30 90
60 30 90 ±20 ±25 454 260

Unit V A

V W °C °C
1 J-STD-020 and JESD-022

Power Semiconductors

Soft Switching Series

IHW30N90R q

Thermal Resistance

Parameter

Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance, junction ambient

Symbol RthJC RthJCD RthJA

Conditions

Max. Value

Unit

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

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Datasheet ID: IHW30N90R 638085