IFS100B12N3E4_B39
IFS100B12N3E4_B39 Datasheet
IFS100B12N3E4_B39
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IFS100B12N3E4_B39 |
IFS100B12N3E4_B39 (pdf) |
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| IGBT-Module IGBT-modules IFS100B12N3E4_B39 Strommesswiderstand VCES = 1200V IC nom = 100A / ICRM = 200A • • Motorantriebe • Servoumrichter • • • • • • Kupferbodenplatte • Standardgehäuse • • • • • • • • • • IGBT-Module IGBT-modules IFS100B12N3E4_B39 Kollektor-Emitter-Sperrspannung Tvj = 25°C Kollektor-Dauergleichstrom TC = 95°C, Tvj = 175°C tP = 1 ms Gesamt-Verlustleistung TC = 25°C, Tvj = 175°C Gate-Emitter-Spitzenspannung VCES IC nom ICRM Ptot VGES 1200 100 200 515 +/-20 Kollektor-Emitter-Sättigungsspannung IC = 100 A, VGE = 15 V IC = 100 A, VGE = 15 V IC = 100 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung IC = 4,00 mA, VCE = VGE, Tvj = 25°C Gateladung VGE = -15 V +15 V Tvj = 25°C Eingangskapazität f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25°C IC = 100 A, VCE = 600 V VGE = ±15 V RGon = 1,6 Tvj = 25°C Tvj = 125°C Tvj = 150°C IC = 100 A, VCE = 600 V VGE = ±15 V RGon = 1,6 |
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