IDV04S60CXKSA1

IDV04S60CXKSA1 Datasheet

2nd Generation thinQ! SiC Schottky Diode IDV04S60C

Part	Datasheet
IDV04S60CXKSA1	IDV04S60CXKSA1 (pdf)

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Silicon Carbide Diode 2nd Generation thinQ! 2nd Generation thinQ! SiC Schottky Diode IDV04S60C Data Sheet Industrial & Multimarket 2nd Generation thinQ! SiC Schottky Diode The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The IDVxxS60C family is extending the already broad portfolio with the TO220FullPAK package. In order to greatly reduce the impact of the internal isolation of the FullPAK on the thermal performance, Infineon is applying new diffusion soldering process for attaching the chip to the leadframe. The result of this is nearly identical thermal characteristics to that of the SiC diodes in the non-isolated TO220 package. temperature • System efficiency improvement over Si diodes • System cost / size savings due to reduced cooling requirements • Good thermal performance without the need for additional isolation layer and washer • Enabling higher frequency / increased power density solutions • Higher system reliability due to lower operating temperatures and less fans • Reduced EMI Applications Fully isolated TO220 package for e.g. CCM PFC Motor Drives Solar Applications UPS Table 1 Key Performance Parameters Parameter Value Unit IF TC < 100°C 4 Table 2 Pin 1 C Pin Definition Pin2 A Pin 3 n.a. IDV04S60C Type / Ordering Code IDV04S60C 1 J-STD20 and JESD22 Final Data Sheet Package PG-TO220 FullPAK Marking D04S60C Related Links IFX SiC Diodes Webpage 2nd Generation thinQ! SiC Schottky Diode IDV04S60C Table of Contents Table of Contents Description 2 Table of Contents 3 Maximum ratings 4 Thermal characteristics 4 Electrical characteristics 5 Electrical characteristics diagrams 6 Package outlines 9 Final Data Sheet Maximum ratings 2nd Generation thinQ! SiC Schottky Diode IDV04S60C Maximum ratings Table 3 Maximum ratings Parameter Continuous forward current Surge non-repetitive forward current, sine halfwave Non-repetitive peak forward current t value IF, SM IF, max VRRM dv/dt Ptot Tj Tstg Min. - 55 - Values Typ. Max. Thermal characteristics Unit Note / Test Condition V/ns W °C TC= < 110°C TC= 25°C, tp = 10 ms TC= 150°C, tp = 10 ms TC= 25°C, tp = 10 µs TC= 25°C, tp = 10 ms TC= 150°C, tp = 10 ms Tj= 25°C VR= V TC= 25 °C Ncm M2.5 screws Table 4 Thermal characteristics TO-220 FullPAK Parameter Min. Thermal resistance, junction - case RthJC Thermal resistance, junction - RthJA ambient Soldering temperature, Tsold

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Silicon Carbide Diode
2nd Generation thinQ!
2nd Generation thinQ! SiC Schottky Diode IDV04S60C

Data Sheet

Industrial & Multimarket
2nd Generation thinQ! SiC Schottky Diode

The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The IDVxxS60C family is extending the already broad portfolio with the TO220FullPAK package. In order to greatly reduce the impact of the internal isolation of the FullPAK on the thermal performance, Infineon is applying new diffusion soldering process for attaching the chip to the leadframe. The result of this is nearly identical thermal characteristics to that of the SiC diodes in the non-isolated TO220 package.
temperature
• System efficiency improvement over Si diodes
• System cost / size savings due to reduced cooling requirements
• Good thermal performance without the need for additional isolation layer and washer
• Enabling higher frequency / increased power density solutions
• Higher system reliability due to lower operating temperatures and less fans
• Reduced EMI

Applications Fully isolated TO220 package for e.g. CCM PFC Motor Drives Solar Applications UPS

Table 1 Key Performance Parameters

Parameter

Value

Unit

IF TC < 100°C 4

Table 2 Pin 1 C

Pin Definition Pin2 A

Pin 3 n.a.

IDV04S60C
Type / Ordering Code IDV04S60C
1 J-STD20 and JESD22 Final Data Sheet

Package PG-TO220 FullPAK

Marking D04S60C

Related Links IFX SiC Diodes Webpage
2nd Generation thinQ! SiC Schottky Diode IDV04S60C

Table of Contents

Table of Contents

Description 2

Table of Contents 3

Maximum ratings 4

Thermal characteristics 4

Electrical characteristics 5

Electrical characteristics diagrams 6

Package outlines 9

Final Data Sheet

Maximum ratings
2nd Generation thinQ! SiC Schottky Diode IDV04S60C

Maximum ratings

Table 3 Maximum ratings Parameter

Continuous forward current Surge non-repetitive forward current, sine halfwave Non-repetitive peak forward current t value

IF, SM

IF, max

VRRM dv/dt Ptot Tj Tstg

Min. - 55 -

Values

Typ. Max.

Thermal characteristics

Unit Note / Test Condition

V/ns W °C

TC= < 110°C TC= 25°C, tp = 10 ms TC= 150°C, tp = 10 ms TC= 25°C, tp = 10 µs TC= 25°C, tp = 10 ms TC= 150°C, tp = 10 ms Tj= 25°C VR= V TC= 25 °C

Ncm M2.5 screws

Table 4 Thermal characteristics TO-220 FullPAK

Parameter

Min.

Thermal resistance, junction - case RthJC

Thermal resistance, junction -

RthJA
ambient

Soldering temperature,

Tsold

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Datasheet ID: IDV04S60CXKSA1 638068