IDC73D120T6MX1SA2
IDC73D120T6MX1SA2 Datasheet
IDC73D120T6M
| Part | Datasheet |
|---|---|
IDC73D120T6MX1SA2 |
IDC73D120T6MX1SA2 (pdf) |
| PDF Datasheet Preview |
|---|
| IDC73D120T6M Diode EMCON 4 Medium Power Chip Features • 1200V EMCON 4 technology • soft, fast switching This chip is used for • low / medium power modules • small temperature coefficient Applications: • low / medium power drives Chip Type IDC73D120T6M 1200V 150A Die Size x mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 187 pcs Photoimide 3200 nm AlSiCu Ni Ag suitable for epoxy and soft solder die bonding Electrically conductive glue or solder 0.65mm max 1.2mm Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, AIM PMD D CID T, L4675B, Edition IDC73D120T6M Maximum Ratings Parameter Condition VRRM Continuous forward current limited by IF Tjmax Maximum repetitive forward current limited by Tjmax IFRM Maximum junction and storage temperature Tvj,max , Tstg Safe operating area2 SOA PMax 1 depending on thermal properties of assembly I F , m a x = 300A, V R , m a x = 1200V, Tvj,op 150°C 2 not subject to production test- verified by design/characterisation Value 1200 Unit V °C kW Static Characteristics tested on wafer Parameter |
| More datasheets: MM74HC688MTC | MM74HC688MTCX | MM74HC688WMX | MM74HC688N | MM74HC688SJ | LFG028207 | BTS5441G | MIKROE-2801 | SY100S363FC | MDM-9SH027B |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IDC73D120T6MX1SA2 Datasheet file may be downloaded here without warranties.