IDC05S60CEX1SA1
IDC05S60CEX1SA1 Datasheet
IDC05S60CE
| Part | Datasheet |
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IDC05S60CEX1SA1 |
IDC05S60CEX1SA1 (pdf) |
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| IDC05S60CE 2nd generation thinQ!TM SiC Schottky Diode Features: Applications: Silicon Carbide • Switching Behaviour Benchmark Recovery • Temperature Independent Switching Behaviour • Qualified According to JEDEC1 Based on Target Applications Chip Type IDC05S60CE 600V 5A Die Size x mm2 Package sawn on foil Mechanical Parameters Die size Area total 1.45x Anode pad size Thickness Wafer size Max. possible chips per wafer 4051 Passivation frontside Photoimide Pad metal 3200 nm AlSiCu Backside metal Ni Ag Die bond Electrically conductive epoxy glue and soft solder Wire bond Reject ink dot size Storage environment1 for original and sealed MBB bags for open MBB bags 0.65mm max 1.2mm Ambient atmosphere air, Temperature 17°C 25°C, < 6 month Acc. to IEC60721-3-3 Atmosphere >99% Nitrogen or inert gas, Humidity <25%RH, Temperature 17°C 25°C, < 6 month 1 Designed for storage conditions according to Infineon TR14 Application Note “Storage of Products Supplied by Infineon Technologies Designed for climate condition under operation according to IEC60721-3-3, class 3K3 Edited by INFINEON Technologies, IFAG IPC TD VLS, L4724E, Edition |
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