IDB18E120ATMA1
IDB18E120ATMA1 Datasheet
IDB18E120
| Part | Datasheet |
|---|---|
IDB18E120ATMA1 |
IDB18E120ATMA1 (pdf) |
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| Fast Switching Emitter Controlled Diode * RoHS compliant IDB18E120 Product Summary VRRM 1200 V IF VF Tjmax 18 A V 150 °C PG-TO263-3-2 Type IDB18E120 Package Ordering Code Marking Pin 1 PIN 2 PIN 3 PG-TO263-3-2 D18E120 NC Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter TC=25°C TC=90°C VRRM IF Surge non repetitive forward current IFSM TC=25°C, tp=10 ms, sine halfwave Maximum repetitive forward current IFRM TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation Ptot TC=25°C TC=90°C Operating and storage temperature Soldering temperature reflow soldering, MSL1 Tj , Tstg TS Value 1200 31 78 113 54 260 Unit V A W °C °C 2013-07-02 IDB18E120 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 1 Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values min. typ. max. Static Characteristics VR=1200V, Tj=25°C VR=1200V, Tj=150°C - 100 |
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