FS100R12KT4B11BOSA1
FS100R12KT4B11BOSA1 Datasheet
FS100R12KT4_B11
| Part | Datasheet |
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FS100R12KT4B11BOSA1 |
FS100R12KT4B11BOSA1 (pdf) |
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| IGBT-Module IGBT-modules FS100R12KT4_B11 Kollektor-Emitter-Sperrspannung Tvj = 25°C VCES 1200 Kollektor-Dauergleichstrom TC = 95°C, Tvj max = 175°C IC nom tP = 1 ms ICRM Gesamt-Verlustleistung TC = 25°C, Tvj max = 175°C Ptot Gate-Emitter-Spitzenspannung VGES +/-20 Kollektor-Emitter-Sättigungsspannung IC = 100 A, VGE = 15 V IC = 100 A, VGE = 15 V IC = 100 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung IC = 3,80 mA, VCE = VGE, Tvj = 25°C Gateladung VGE = -15 V +15 V Tvj = 25°C Eingangskapazität f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25°C IC = 100 A, VCE = 600 V VGE = ±15 V RGon = 1,6 Tvj = 25°C Tvj = 125°C Tvj = 150°C IC = 100 A, VCE = 600 V VGE = ±15 V RGon = 1,6 Tvj = 25°C Tvj = 125°C Tvj = 150°C IC = 100 A, VCE = 600 V VGE = ±15 V RGoff = 1,6 Tvj = 25°C Tvj = 125°C Tvj = 150°C IC = 100 A, VCE = 600 V VGE = ±15 V RGoff = 1,6 Tvj = 25°C Tvj = 125°C Tvj = 150°C |
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