FD600R12KF4NOSA1
FD600R12KF4NOSA1 Datasheet
FD600R12KF4
| Part | Datasheet |
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FD600R12KF4NOSA1 |
FD600R12KF4NOSA1 (pdf) |
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| European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 600 R 12 KF4 screwing depth max. 8 31,5 55,2 11,85 130 114 M4 28 screwing depth max. 8 7 2,5 deep 16 40 2,5 deep A13/97 Mod-E/ 13.Jan 1998 G.Schulze FD 600 R 12 KF 4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collctor current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Isolations-Prüfspannung insulation test voltage tp=1 ms tC=25°C, Transistor /transistor tp=1ms RMS, f=50 Hz, t= 1 min. VCES IC ICRM Ptot VGE IF IFRM VISOL Charakteristische Werte / Characteristic values Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung Eingangskapazität Kollektor-Emitter Reststrom gate threshold voltage input capacity collector-emitter cut-off current Gate-Emitter Reststrom Emitter-Gate Reststrom Einschaltzeit induktive Last gate leakage current gate leakage current turn-on time inductive load Speicherzeit induktive Last |
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