F475R07W2H3B51BOMA1
F475R07W2H3B51BOMA1 Datasheet
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F475R07W2H3B51BOMA1 |
F475R07W2H3B51BOMA1 (pdf) |
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| IGBT-Modul IGBT-Module F4-75R07W2H3_B51 • • • Al2O3 Substrat mit kleinem thermischen Widerstand • • VCES = 650V IC nom = 75A / ICRM = 150A • • • • • Digit IGBT-Modul IGBT-Module F4-75R07W2H3_B51 Kollektor-Emitter-Sperrspannung Tvj = 25°C Kollektor-Dauergleichstrom TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C tP = 1 ms Gesamt-Verlustleistung TC = 25°C, Tvj max = 175°C Gate-Emitter-Spitzenspannung VCES IC nom IC ICRM Ptot VGES 75 37,5 75 150 +/-20 Kollektor-Emitter-Sättigungsspannung IC = 37,5 A, VGE = 15 V IC = 37,5 A, VGE = 15 V IC = 37,5 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung IC = 1,20 mA, VCE = VGE, Tvj = 25°C Gateladung VGE = -15 V +15 V Tvj = 25°C Eingangskapazität f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom VCE = 650 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom |
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