Smart Low Side Power Switch HITFET BTS 117
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BTS117E3044ANTMA1 (pdf) |
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BTS117 |
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Smart Low Side Power Switch HITFET BTS 117 Features • Logic Level Input • Input Protection ESD •=Thermal shutdown with latch • Overload protection • Short circuit protection • Overvoltage protection • Current limitation • Status feedback with external input resistor • Analog driving possible • AEC qualified • Green product RoHS compliant Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS on I D lim I D ISO EAS 60 V 100 7A A 1000 mJ Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits N channel vertical power FET in Smart chip on chip technology. Providing embedded protection functions. LOAD dv/dt lim itation C u rre n t lim itation O ve rvo lta g e protection D ra in 2 O v e rlo a d p ro te c tio n O ve rtem perature p ro te c tio n SShhoorrtt cciirrccuuiitt pprrootteeccttiioonn Source H IT F E T Datasheet Smart Low Side Power Switch HITFET BTS 117 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current 1 -0.2V VIN 10V VIN < -0.2V or VIN > 10V VDS SC IIN Operating temperature Storage temperature Tstg Power dissipation Ptot TC = 25 °C Unclamped single pulse inductive energy ID ISO = A Electrostatic discharge voltage Human Body Model VESD according to MIL STD 883D, method and EOS/ESD assn. standard S5.1 - 1993 Load dump protection VLoadDump2 = VA + VS VIN=low or high VA=13.5 V td = 400 ms, RI = 2 ID=0,5*3.5A td = 400 ms, RI = 2 ID= 3.5A Value 60 32 no limit | IIN | 2 - 40 +150 - 55 +150 |
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