BTS113ANKSA1

BTS113ANKSA1 Datasheet

BTS 113 A

Part	Datasheet
BTS113ANKSA1	BTS113ANKSA1 (pdf)

Related Parts	Information
BTS113AE3045ANTMA1	BTS113AE3045ANTMA1

PDF Datasheet Preview
BTS 113 A q N channel q Logic level q Enhancement mode q Temperature sensor with thyristor characteristic q The drain pin is electrically shorted to the tab Type BTS 113A RDS on Package TO-220AB Ordering Code C67078-S5015-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 VGS = 10 V, VDS = V Pulsed drain current, TC = 25 °C Short circuit current, Tj = 55 + 150 °C Short circuit dissipation, Tj = 55 + 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient VDS VDGR VGS ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg Rth JC Rth JA Values 60 ± 10 46 27 400 40 55 + 150 E 55/150/56 Unit V W °C K/W BTS 113 A Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Static Characteristics Drain-source breakdown voltage VGS = 0, ID = mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VGS = 0 V, VDS = 60 V Tj = 25 °C Tj = 125 °C Gate-source leakage current VGS = ± 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = V, ID = A Dynamic Characteristics Forward transconductance VDS 2 x ID x R , DS on max ID = A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Ordering Code C67078-S5015-A3 TO 220 AB Ordering Code SMD Version E 3045 A C67078-S5015-A4 Tape & reel GPT05155 1 punch direction, burr max. 2 dip tinning 3 max. by dip tinning press burr max. BTS 113 A Edition Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide see address list . Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

PDF Datasheet Preview

BTS 113 A
q N channel q Logic level q Enhancement mode q Temperature sensor with thyristor characteristic q The drain pin is electrically shorted to the tab

Type BTS 113A

RDS on

Package TO-220AB
Ordering Code C67078-S5015-A2

Maximum Ratings

Parameter Drain-source voltage

Drain-gate voltage, RGS = 20

Gate-source voltage

Continuous drain current, TC = 25 °C

ISO drain current

TC = 85 VGS = 10 V, VDS = V Pulsed drain current, TC = 25 °C Short circuit current, Tj = 55 + 150 °C Short circuit dissipation, Tj = 55 + 150 °C

Power dissipation

Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient

VDS VDGR VGS ID-ISO

ID puls ISC PSCmax Ptot Tj, Tstg

Rth JC Rth JA

Values 60 ± 10
46 27 400 40 55 + 150 E 55/150/56

Unit V

W °C K/W

BTS 113 A

Electrical Characteristics
at Tj = 25 °C, unless otherwise specified.

Parameter

Static Characteristics

Drain-source breakdown voltage

VGS = 0, ID = mA

Gate threshold voltage

VGS = VDS, ID = 1 mA

Zero gate voltage drain current

VGS = 0 V, VDS = 60 V

Tj = 25 °C Tj = 125 °C

Gate-source leakage current

VGS = ± 20 V, VDS = 0

Tj = 25 °C Tj = 150 °C

Drain-source on-state resistance

VGS = V, ID = A

Dynamic Characteristics

Forward transconductance

VDS 2 x ID x R , DS on max ID = A

Input capacitance

VGS = 0, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0, VDS = 25 V, f = 1 MHz
Ordering Code C67078-S5015-A3

TO 220 AB
Ordering Code

SMD Version E 3045 A C67078-S5015-A4

Tape & reel

GPT05155
1 punch direction, burr max. 2 dip tinning 3 max. by dip tinning press burr max.

BTS 113 A

Edition Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany

Infineon Technologies AG

All Rights Reserved.

Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.

Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide see address list .

Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BTS113ANKSA1 Datasheet file may be downloaded here without warranties.

Datasheet ID: BTS113ANKSA1 637883