BS7067N06LS3G

BS7067N06LS3G Datasheet

Part	Datasheet
BS7067N06LS3G	BS7067N06LS3G (pdf)

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OptiMOS TM 3 Power-Transistor • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS on product FOM • Very low on-resistance RDS on • N-channel, logic level • 100% avalanche tested • Pb-free plating RoHS compliant • Qualified according to JEDEC1 for target applications Type BSZ067N06LS3 G BSZ067N06LS3 G Product Summary V DS R DS on ,max ID 60 V 20 A Package Marking PG-TSDSON-8 067N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=60 K/W2 Pulsed drain current3 I D,pulse T C=25 °C Avalanche energy, single pulse4 I D=20 A, R GS=25 Gate source voltage ±20 1 J-STD20 and JESD22 2 Device on 40 mm x 40 mm x mm epoxy PCB FR4 with 6 cm2 one layer, 70 µm thick copper area for drain connection. PCB is vertical in still air. 3 See figure 3 for more detailed information 4 See figure 13 for more detailed information 2008-08-20 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C T A=25 °C, R thJA=60 K/W2

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OptiMOS TM 3 Power-Transistor
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS on product FOM
• Very low on-resistance RDS on
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating RoHS compliant
• Qualified according to JEDEC1 for target applications

Type

BSZ067N06LS3 G

BSZ067N06LS3 G

Product Summary V DS R DS on ,max ID
60 V 20 A

Package Marking

PG-TSDSON-8 067N06L

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Value

Unit

Continuous drain current

V GS=10 V, T C=25 °C

V GS=10 V, T C=100 °C

V GS=4.5 V, T C=25 °C

V GS=4.5 V, T C=100 °C

V GS=10 V, T A=25 °C, R thJA=60 K/W2

Pulsed drain current3

I D,pulse T C=25 °C

Avalanche energy, single pulse4

I D=20 A, R GS=25

Gate source voltage
±20
1 J-STD20 and JESD22
2 Device on 40 mm x 40 mm x mm epoxy PCB FR4 with 6 cm2 one layer, 70 µm thick copper area for drain connection. PCB is vertical in still air.
3 See figure 3 for more detailed information
4 See figure 13 for more detailed information
2008-08-20

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Power dissipation

P tot

T C=25 °C

T A=25 °C, R thJA=60 K/W2

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Datasheet ID: BS7067N06LS3G 637877