BSP88E6327

BSP88E6327 Datasheet

BSP 88

Part	Datasheet
BSP88E6327	BSP88E6327 (pdf)

Related Parts	Information
BSP88L6327HTSA1	BSP88L6327HTSA1

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SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.6...1.2V BSP 88 Type BSP 88 Type BSP 88 VDS 240 V Ordering Code Q67000-S070 Pin 1 G Pin 2 D Pin 3 S Pin 4 D RDS on Package SOT-223 Tape and Reel Information E6327 Marking BSP 88 Maximum Ratings Parameter Drain source voltage Drain-gate voltage RGS = 20 Gate source voltage ESD Sensitivity HBM as per MIL-STD 883 Continuous drain current TA = 25 DC drain current, pulsed TA = 25 Power dissipation TA = 25 Symbol VDS V IDpuls Ptot Values Unit ± 20 Class 1 A Data Sheet BSP 88 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point 1 DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA R thJS 1 Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Values Unit -55 + 150 -55 + 150 55 / 150 / 56 Electrical Characteristics, at Tj = unless otherwise specified Parameter min. Values Unit typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = mA, Tj = 25 Gate threshold voltage VGS=VDS, ID = 1 mA Zero gate voltage drain current VDS = 240 V, VGS = 0 V, Tj = 25 VDS = 240 V, VGS = 0 V, Tj = 125 VDS = 100 V, VGS = 0 V, Tj = 25 Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = V, ID = A VGS = V, ID = 14 mA V BR DSS VGS th IDSS IGSS

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SIPMOS Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• VGS th = 0.6...1.2V

BSP 88

Type BSP 88 Type BSP 88

VDS 240 V
Ordering Code Q67000-S070

Pin 1 G

Pin 2 D

Pin 3 S

Pin 4 D

RDS on

Package SOT-223

Tape and Reel Information E6327

Marking BSP 88

Maximum Ratings Parameter Drain source voltage Drain-gate voltage

RGS = 20

Gate source voltage ESD Sensitivity HBM as per MIL-STD 883 Continuous drain current TA = 25 DC drain current, pulsed TA = 25 Power dissipation TA = 25

Symbol VDS V

IDpuls

Ptot

Values

Unit
± 20

Class 1 A

Data Sheet

BSP 88

Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point 1 DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1

Tj Tstg RthJA R thJS
1 Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Values

Unit
-55 + 150
-55 + 150
55 / 150 / 56

Electrical Characteristics, at Tj = unless otherwise specified

Parameter
min.

Values

Unit
typ.
max.

Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = mA, Tj = 25 Gate threshold voltage VGS=VDS, ID = 1 mA Zero gate voltage drain current VDS = 240 V, VGS = 0 V, Tj = 25 VDS = 240 V, VGS = 0 V, Tj = 125 VDS = 100 V, VGS = 0 V, Tj = 25 Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = V, ID = A VGS = V, ID = 14 mA

V BR DSS

VGS th

IDSS

IGSS

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Datasheet ID: BSP88E6327 637846