BSP298
Part | Datasheet |
---|---|
![]() |
BSP298 E6327 (pdf) |
Related Parts | Information |
---|---|
![]() |
BSP298L6327HUSA1 |
PDF Datasheet Preview |
---|
BSP298 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS th = V • Pb-free lead plating RoHS compliant • Qualified according to AEC Q101 Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSP298 Type BSP298 VDS 400 V Pb-free Yes RDS on Package PG-SOT223 Marking BSP298 Tape and Reel Information Packaging L6327 Maximum Ratings Parameter Continuous drain current TA = 26 °C DC drain current, pulsed TA = 25 °C Avalanche energy, single pulse ID = A, VDD = 50 V, RGS = 25 L = 125 mH, Tj = 25 °C Gate source voltage Power dissipation TA = 25 °C ESD Class JESD22-A114-HBM Symbol ID IDpuls EAS VGS Ptot Values Unit ± 20 Class 1b 2008-03-25 BSP298 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1 DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA RthJS 1 Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Values Unit -55 + 150 °C -55 + 150 55 / 150 / 56 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Values Unit min. typ. |
More datasheets: MM80C97N | MAX44008EDT+ | MAX44008GDT+T | MAX44006EDT+CHX | MAX44006EDT+ | MAX44006GDT+T | MAX44006EDT+TCHX | IPB05N03LA | IPB05N03LAT | IPB05N03LA G |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BSP298E6327 Datasheet file may be downloaded here without warranties.