BSP298 E6327

BSP298 E6327 Datasheet


BSP298

Part Datasheet
BSP298 E6327 BSP298 E6327 BSP298 E6327 (pdf)
Related Parts Information
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BSP298

SIPMOS Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
• VGS th = V
• Pb-free lead plating RoHS compliant
• Qualified according to AEC Q101

Pin 1 G

Pin 2 D

Pin 3 S

Pin 4 D

Type BSP298

Type BSP298

VDS 400 V

Pb-free Yes

RDS on

Package PG-SOT223

Marking BSP298

Tape and Reel Information Packaging

L6327

Maximum Ratings Parameter Continuous drain current TA = 26 °C DC drain current, pulsed TA = 25 °C Avalanche energy, single pulse

ID = A, VDD = 50 V, RGS = 25

L = 125 mH, Tj = 25 °C Gate source voltage Power dissipation TA = 25 °C ESD Class JESD22-A114-HBM

Symbol ID IDpuls EAS

VGS Ptot

Values

Unit
± 20

Class 1b
2008-03-25

BSP298

Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1 DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1

Tj Tstg RthJA RthJS
1 Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Values

Unit
-55 + 150 °C
-55 + 150
55 / 150 / 56

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Values

Unit
min.
typ.
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Datasheet ID: BSP298E6327 637830