BSO615CT
BSO615CT Datasheet
BSO 615 C
| Part | Datasheet |
|---|---|
BSO615CT |
BSO615CT (pdf) |
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| Preliminary data BSO 615 C Small-Signal-Transistor Features • Dual N- and P -Channel • Enhancement mode • Logic Level • Avalanche rated • dv/dt rated Product Summary Drain source voltage Drain-Source on-state resistance RDS on Continuous drain current ID P -60 V Type BSO 615 C Package SO 8 Ordering Code Q67041-S4024 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value ±20 ±20 55/150/56 Unit A kV/µs V W °C 1999-10-28 Preliminary data BSO 615 C Termal Characteristics Parameter Dynamic Characteristics Thermal resistance, junction - soldering point Pin 4 SMD version, device on PCB min. footprint t 10 sec. 6 cm2 cooling area 1 t 10 sec. min. footprint t 10 sec. 6 cm2 cooling area 1 t 10 sec. Values Unit min. typ. max. N RthJS - 40 K/W RthJA - 100 - 110 Static Characteristics, at Tj = 25 °C, unless otherwise specified Drain- source breakdown voltage V BR DSS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA Gate threshold voltage, VGS = VDS ID = 20 µA ID = -450 µA VGS th Zero gate voltage drain current VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C IDSS Gate-source leakage current VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V IGSS Drain-Source on-state resistance VGS = V, ID = A VGS = V, ID = A RDS on Drain-Source on-state resistance RDS on |
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