BSO4822
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BSO4822 (pdf) |
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Preliminary data BSO4822 OptiMOSâ Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS on product FOM • 150°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching applications Product Summary RDS on 10 Type BSO4822 Package SO 8 Ordering Code Q67042-S4095 Marking 4822 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Pulsed drain current TA=25°C Avalanche energy, single pulse ID=12.7 A , VDD=25V, ID puls EAS dv/dt IS=12.7A, VDS=24V, di/dt=200A/µs, Tjmax=150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 VGS Ptot Tj , Tstg Value ±20 +150 55/150/56 Unit A mJ kV/µs V W °C 2002-01-28 Preliminary data BSO4822 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: min. footprint t 10 sec. 6 cm2 cooling area 1 t 10 sec. Values Unit min. typ. max. RthJS RthJA 35 K/W - 110 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics |
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