BSO4822

BSO4822 Datasheet


BSO4822

Part Datasheet
BSO4822 BSO4822 BSO4822 (pdf)
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Preliminary data

BSO4822

OptiMOSâ Small-Signal-Transistor

Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x RDS on product FOM
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
• Ideal for fast switching applications

Product Summary

RDS on 10

Type BSO4822

Package SO 8
Ordering Code Q67042-S4095

Marking 4822

Maximum Ratings,at Tj = 25 °C, unless otherwise specified

Parameter

Continuous drain current

TA=25°C

TA=70°C

Pulsed drain current

TA=25°C

Avalanche energy, single pulse

ID=12.7 A , VDD=25V,

ID puls EAS dv/dt

IS=12.7A, VDS=24V, di/dt=200A/µs, Tjmax=150°C

Gate source voltage Power dissipation

TA=25°C

Operating and storage temperature IEC climatic category DIN IEC 68-1

VGS Ptot

Tj , Tstg

Value
±20
+150 55/150/56

Unit A
mJ kV/µs V W °C
2002-01-28

Preliminary data

BSO4822

Thermal Characteristics Parameter

Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB:
min. footprint t 10 sec. 6 cm2 cooling area 1 t 10 sec.

Values

Unit
min. typ. max.

RthJS RthJA
35 K/W
- 110

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

Static Characteristics
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Datasheet ID: BSO4822 637827