BSO303SPNTMA1
BSO303SPNTMA1 Datasheet
BSO303SP
| Part | Datasheet |
|---|---|
BSO303SPNTMA1 |
BSO303SPNTMA1 (pdf) |
| PDF Datasheet Preview |
|---|
| Preliminary data BSO303SP Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated Product Summary -30 V RDS on 21 S1 S2 S3 8D 7D 6D Top View SIS00062 Type BSO303SP Package SO 8 Ordering Code Q67042-S4129 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Pulsed drain current TA=25°C Avalanche energy, single pulse ID=-8.9 A , VDD=-25V, ID puls EAS dv/dt IS=-8.9A, VDS=-24V, di/dt=200A/µs, Tjmax=150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 VGS Ptot Tj , Tstg Value ±20 +150 55/150/56 Unit A mJ kV/µs V W °C 2002-01-08 Preliminary data BSO303SP Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: min footprint, t < 10s 6 cm2 cooling area 1 Values Unit min. typ. max. RthJS RthJA 35 K/W - 110 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage |
| More datasheets: R507-160-000 | R507-102-000 | R507-104-000 | R507-200-000 | R507-162-000 | R507-120-000 | R507-124-000 | R507-122-000 | R507-100-000 | ICS726TLFT |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BSO303SPNTMA1 Datasheet file may be downloaded here without warranties.