BSO211PNTMA1
BSO211PNTMA1 Datasheet
BSO211P
| Part | Datasheet |
|---|---|
BSO211PNTMA1 |
BSO211PNTMA1 (pdf) |
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| Preliminary data BSO211P Small-Signal-Transistor Feature • Dual P-Channel • Enhancement mode • Super Logic Level V rated • 150°C operating temperature • Avalanche rated • dv/dt rated Product Summary -20 V RDS on 67 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SIS00070 Type BSO211P Package SO 8 Ordering Code Q67042-S4064 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Pulsed drain current TA=25°C Avalanche energy, single pulse ID=-4.7 A , VDD=-10V, ID puls EAS dv/dt IS=-4.7A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 VGS Ptot Tj , Tstg Value ±12 2 +150 55/150/56 Unit A mJ kV/µs V W °C 2002-01-22 Preliminary data BSO211P Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: min. footprint, t<10s 6 cm2 cooling area 1 Values Unit min. typ. max. RthJS RthJA 50 K/W - 110 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage |
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