BSO104N03S

BSO104N03S Datasheet

BSO104N03S

Part	Datasheet
BSO104N03S	BSO104N03S (pdf)

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OptiMOS 2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC1 for target applications • N-channel • Logic level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on • Superior thermal resistance • Avalanche rated • Pb-free plating RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS on ,max ID BSO104N03S 30 V 13 A PG-DSO-8 Type Package Marking BSO104N03S PG-DSO-8 104N3S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C2 T A=70 °C2 T A=25 °C3 Avalanche energy, single pulse I D=13 A, R GS=25 dv /dt I D=13 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage Power dissipation V GS P tot T A=25 °C2 Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value Unit 10 secs steady state kV/µs ±20 -55 150 55/150/56 2010-05-06 Parameter Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient Symbol Conditions BSO104N03S min. Values typ.

PDF Datasheet Preview

OptiMOS 2 Power-Transistor

Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC1 for target applications
• N-channel
• Logic level
• Excellent gate charge x R DS on product FOM
• Very low on-resistance R DS on
• Superior thermal resistance
• Avalanche rated
• Pb-free plating RoHS compliant
• Halogen-free according to IEC61249-2-21

Product Summary V DS R DS on ,max ID

BSO104N03S
30 V 13 A

PG-DSO-8

Type

Package

Marking

BSO104N03S

PG-DSO-8
104N3S

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current Pulsed drain current

ID I D,pulse

T A=25 °C2 T A=70 °C2 T A=25 °C3

Avalanche energy, single pulse

I D=13 A, R GS=25
dv /dt

I D=13 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C

Gate source voltage Power dissipation

V GS P tot

T A=25 °C2

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

Value

Unit
10 secs steady state
kV/µs
±20
-55 150
55/150/56
2010-05-06

Parameter

Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient

Symbol Conditions

BSO104N03S
min.

Values typ.

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Datasheet ID: BSO104N03S 637802