BSM50GD120DN2G
BSM50GD120DN2G Datasheet
BSM 50 GD 120 DN2G
| Part | Datasheet |
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BSM50GD120DN2G |
BSM50GD120DN2G (pdf) |
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| BSM 50 GD 120 DN2G IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 50 GD 120 DN2G VCE IC 1200V 78A Package ECONOPACK 3 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol VCE VCGR VGE IC ICpuls Ptot Tj Tstg RthJC RthJCD Vis - Ordering Code C67070-A2521-A67 Values Unit 1200 1200 ± 20 A 78 50 + 150 -40 + 125 2500 40 / 125 / 56 Oct-01-2003 BSM 50 GD 120 DN2G Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values min. typ. max. Static Characteristics Gate threshold voltage VGE th VGE = VCE, IC = 2 mA Collector-emitter saturation voltage VCE sat VGE = 15 V, IC = 50 A, Tj = 25 °C VGE = 15 V, IC = 50 A, Tj = 125 °C Zero gate voltage collector current ICES VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V gfs 23 Ciss - Coss - Crss - 3300 - Unit V mA nA S pF Oct-01-2003 |
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