BSM300GA170DN2HOSA1
BSM300GA170DN2HOSA1 Datasheet
BSM 300 GA 170 DN2
| Part | Datasheet |
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BSM300GA170DN2HOSA1 |
BSM300GA170DN2HOSA1 (pdf) |
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| BSM 300 GA 170 DN2 IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = Ohm Type BSM 300 GA 170 DN2 VCE IC 1700V 440A BSM 300 GA 170 DN2 S 1700V 440A Package SINGLE SWITCH 1 SSW SENSE 1 Ordering Code C67070-A2706-A67 C67070-A2708-A67 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol VCE VCGR VGE IC ICpuls Ptot Tj Tstg RthJC RthJCD Vis - Values Unit 1700 1700 ± 20 A 440 300 2500 + 150 -40 + 125 4000 40 / 125 / 56 Oct-27-1997 BSM 300 GA 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values min. typ. max. Static Characteristics Gate threshold voltage VGE th VGE = VCE, IC = 20 mA Collector-emitter saturation voltage VCE sat VGE = 15 V, IC = 300 A, Tj = 25 °C VGE = 15 V, IC = 300 A, Tj = 125 °C Zero gate voltage collector current ICES VCE = 1700 V, VGE = 0 V, Tj = 25 °C VCE = 1700 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V |
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