BSM100GB170DN2HOSA1
BSM100GB170DN2HOSA1 Datasheet
BSM 100 GB 170 DN2
| Part | Datasheet |
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BSM100GB170DN2HOSA1 |
BSM100GB170DN2HOSA1 (pdf) |
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| BSM 100 GB 170 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 15 Ohm Type BSM 100 GB 170 DN2 VCE IC 1700V 145A Package HALF-BRIDGE 2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol VCE VCGR VGE IC ICpuls Ptot Tj Tstg RthJC RthJCD Vis - Ordering Code C67070-A2703-A67 Values Unit 1700 1700 ± 20 A 145 100 1000 + 150 -40 + 125 4000 40 / 125 / 56 Oct-27-1997 BSM 100 GB 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values min. typ. max. Static Characteristics Gate threshold voltage VGE th VGE = VCE, IC = 8 mA Collector-emitter saturation voltage VCE sat VGE = 15 V, IC = 100 A, Tj = 25 °C VGE = 15 V, IC = 100 A, Tj = 125 °C Zero gate voltage collector current ICES VCE = 1700 V, VGE = 0 V, Tj = 25 °C VCE = 1700 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V gfs 36 Ciss - Coss - Crss - Unit V mA nA S nF Oct-27-1997 |
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