BSF024N03LT3GXUMA1
BSF024N03LT3GXUMA1 Datasheet
BSF024N03LT3 G
| Part | Datasheet |
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BSF024N03LT3GXUMA1 |
BSF024N03LT3GXUMA1 (pdf) |
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| BSF024N03LT3 G OptiMOSTM3 Power-MOSFET Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on • Excellent gate charge x R DS on product FOM Product Summary VDS RDS on ,max ID 30 V mW 106 A • Low parasitic inductance • Low profile mm CanPAKTM S • 100% avalanche tested • 100% Rg Tested • Double-sided cooling • Pb-free plating RoHS compliant • Compatible with package ST footprint and outline 1 • Qualified according to JEDEC2 for target applications Type BSF024N03LT3 G Package MG-WDSON-2 Outline ST Marking 0703 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=58 K/W2 Pulsed drain current3 I D,pulse T C=25 °C Avalanche current, single pulse4 T C=25 °C Avalanche energy, single pulse Gate source voltage E AS V GS I D=40 A, R GS=25 W ±20 1 CanPAKTM uses DirectFET technology licensed from International Rectifier Corporation. is a registered trademark of International Rectifier Corporation. 2 J-STD20 and JESD22 3 See figure 3 for more detailed information 4 See figure 13 for more detailed information 2013-10-24 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot |
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