BSD223P
BSD223P Datasheet
BSD 223P
| Part | Datasheet |
|---|---|
BSD223P |
BSD223P (pdf) |
| Related Parts | Information |
|---|---|
BSD223P L6327 |
BSD223P L6327 |
| PDF Datasheet Preview |
|---|
| BSD 223P Small-Signal-Transistor Feature • Dual P-Channel • Enhancement mode • Super Logic Level V rated • 150°C operating temperature • Avalanche rated • dv/dt rated Product Summary -20 V RDS on PG-SOT-363 • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 VPS05604 MOSFET1 1,2,6 MOSFET2 3,4,5 Drain pin 6,3 Type BSD 223P Package PG-SOT-363 Tape & Reel Marking H6327 3000pcs/r X1s Gate pin 2,5 Source pin 1,4 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Pulsed drain current TA=25°C Avalanche energy, single pulse ID=-0.39 A , VDD=-10V, ID puls EAS dv/dt IS=-0.39A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 VGS Ptot Tj , Tstg Value ±12 +150 55/150/56 Unit A mJ kV/µs V W °C 2011-07-13 Thermal Characteristics Parameter |
| More datasheets: SMAJ4751AE3/TR13 | SMAJ4751CE3/TR13 | SMAJ4751E3/TR13 | SMAJ4750CE3/TR13 | SMAJ4730AE3/TR13 | APTGT150DA60TG | IPP80N06S3L-06 | IPI80N06S3L06XK | IPB80N06S3L-06 | BSD223P L6327 |
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