BSC048N025S G
BSC048N025S G Datasheet
BSC048N025S G
| Part | Datasheet |
|---|---|
BSC048N025S G |
BSC048N025S G (pdf) |
| PDF Datasheet Preview |
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| Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC1 for target applications • Logic level / N-channel • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on • Superior thermal resistance • Avalanche rated • dv /dt rated • Pb-free lead plating RoHS compliant BSC048N025S G Product Summary V DS R DS on ,max ID 25 V 89 A PG-TDSON-8 Type BSC048N025S G Package PG-TDSON-8 Marking 48N025S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C T C=100 °C T A=25 °C, R thJA=45 K/W2 Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T C=25 °C3 I D=50 A, R GS=25 dv /dt I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage Power dissipation P tot T C=25 °C T A=25 °C, R thJA=45 K/W2 Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 89 56 19 200 185 ±20 63 -55 150 55/150/56 Unit A mJ kV/µs V W °C 2008-10-13 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA bottom top minimal footprint 6 cm2 cooling area2 BSC048N025S G |
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