BSB017N03LX3 G

BSB017N03LX3 G Datasheet

OptiMOS BSB017N03LX3

Part	Datasheet
BSB017N03LX3 G	BSB017N03LX3 G (pdf)

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n-Channel Power MOSFET OptiMOS BSB017N03LX3 Data Sheet 2011-05-27 Final Industrial & Multimarket OptiMOS Power-MOSFET BSB017N03LX3 G OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS 30V the best choice forthe demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space- efficiency and cost. OptiMOS products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications • Optimized for high switching frequency DC/DC converter • 100% avalanche tested • Very low on-resistance RDS on • Excellent gate charge x RDS on product FOM • Qualified according to JEDEC1 for target applications • Pb-free plating RoHS compliant • Halogen-free according to IEC61249-2-21 • Double.sided cooling • Low parasitic inductance • Compatible with package MX footprint and outline • 100% Rg Tested • Low profile mm • On board power for server • Power managment for high performance computing • Synchronous rectification • High power density point of load converters Table 1 Key Performance Parameters Parameter Value Unit RDS on ,max QOSS Qg.typ Related Links IFX OptiMOS webpage IFX OptiMOS product brief IFX OptiMOS spice models IFX Design tools Type BSB017N03LX3 G Package MG-WDSON-2 Marking 1103 1 J-STD20 and JESD22 Final Data Sheet 2011-05-27 OptiMOS Power-MOSFET BSB017N03LX3 G Maximum ratings at Tj = 25 °C, unless otherwise specified. Table 2 Maximum ratings Parameter Continuous drain current Pulsed drain current2 Avalanche current, single pulse3 Avalanche energy, single pulse Gate source voltage Power dissipation ID,pulse IAS EAS VGS Ptot Operating and storage temperature Tj,Tstg IEC climatic category DIN IEC 68-1 J-STD20 and JESD22 2 See figure 3 for more detailed information 3 See figure 13 for more detailed information Min. - Values Typ. Max. -20 - -40 - 55/150/56 Unit Note / Test Condition VGS=10 V, TC=25 °C VGS=10 V, TC=100 °C VGS=10 V, TA=25 °C, RthJA=45 K/W1

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n-Channel Power MOSFET

OptiMOS BSB017N03LX3

Data Sheet
2011-05-27 Final

Industrial & Multimarket

OptiMOS Power-MOSFET BSB017N03LX3 G

OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS 30V the best choice forthe demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space- efficiency and cost. OptiMOS products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications
• Optimized for high switching frequency DC/DC converter
• 100% avalanche tested
• Very low on-resistance RDS on
• Excellent gate charge x RDS on product FOM
• Qualified according to JEDEC1 for target applications
• Pb-free plating RoHS compliant
• Halogen-free according to IEC61249-2-21
• Double.sided cooling
• Low parasitic inductance
• Compatible with package MX footprint and outline
• 100% Rg Tested
• Low profile mm
• On board power for server
• Power managment for high performance computing
• Synchronous rectification
• High power density point of load converters

Table 1 Key Performance Parameters

Parameter

Value

Unit

RDS on ,max

QOSS

Qg.typ

Related Links IFX OptiMOS webpage IFX OptiMOS product brief IFX OptiMOS spice models IFX Design tools

Type BSB017N03LX3 G

Package MG-WDSON-2

Marking 1103
1 J-STD20 and JESD22

Final Data Sheet
2011-05-27

OptiMOS Power-MOSFET BSB017N03LX3 G

Maximum ratings
at Tj = 25 °C, unless otherwise specified.

Table 2 Maximum ratings Parameter

Continuous drain current

Pulsed drain current2 Avalanche current, single pulse3 Avalanche energy, single pulse Gate source voltage Power dissipation

ID,pulse IAS EAS VGS Ptot

Operating and storage temperature Tj,Tstg IEC climatic category DIN IEC 68-1 J-STD20 and JESD22 2 See figure 3 for more detailed information 3 See figure 13 for more detailed information

Min. -

Values

Typ. Max.
-20 -
-40 -
55/150/56

Unit Note / Test Condition

VGS=10 V, TC=25 °C

VGS=10 V, TC=100 °C

VGS=10 V, TA=25 °C, RthJA=45 K/W1

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Datasheet ID: BSB017N03LX3G 637737