BG3123RE6327HTSA1

BG3123RE6327HTSA1 Datasheet

BG3123...

Part	Datasheet
BG3123RE6327HTSA1	BG3123RE6327HTSA1 (pdf)

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BG3123... DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF and VHF -tuners e.g. NTSC, PAL • Optimized for UHF amp. B and VHF amp. A • Integrated gate protection diodes • High AGC-range, low noise figure, high gain • Improved cross modulation at gain reduction BG3123 BG3123R Input RG1 Drain RF Output + DC ESD Electrostatic discharge sensitive device, observe handling precaution! Type BG3123 BG3123R Package SOT363 Pin Configuration 1=G1* 2=G2 3=D* 4=D** 5=S 1=G1* 2=S 3=D* 4=D 5=G2 Marking 6=G1 KOs 6=G1** KRs * For amp. A ** for amp. B 180° rotated tape loading orientation available Maximum Ratings Parameter Drain-source voltage Continuous drain current amp. A amp. B Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation Storage temperature Channel temperature Symbol VDS ID ±IG1/2SM ±VG1/G2S Ptot Tstg Tch Value Unit -55 150 2006-06-21 BG3123... Thermal Resistance Parameter Channel - soldering point1 Symbol Rthchs Value Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 10 µA, VG1S = 0 V, VG2S = 0 V Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 V, VDS = 0 V Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 V, VDS = 0 V Gate1-source leakage current VG1S = 6 V, VG2S = 0 V Gate2-source leakage current VG2S = 8 V, VG1S = 0 V, VDS = 0 V Drain current VDS = 5 V, VG1S = 0 V, VG2S = V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 60 amp. A V BR DS +V BR G1SS 6 +V BR G2SS 6 +IG1SS 50 µA +IG2SS

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BG3123...

DUAL N-Channel MOSFET Tetrode
• Two gain controlled input stages for UHF and VHF -tuners e.g. NTSC, PAL
• Optimized for UHF amp. B and VHF amp. A
• Integrated gate protection diodes
• High AGC-range, low noise figure, high gain
• Improved cross modulation at gain reduction

BG3123

BG3123R

Input RG1

Drain

RF Output + DC

ESD Electrostatic discharge sensitive device, observe handling precaution!

Type BG3123 BG3123R

Package SOT363

Pin Configuration 1=G1* 2=G2 3=D* 4=D** 5=S 1=G1* 2=S 3=D* 4=D** 5=G2

Marking 6=G1** KOs 6=G1** KRs
* For amp. A ** for amp. B
180° rotated tape loading orientation available

Maximum Ratings Parameter Drain-source voltage Continuous drain current amp. A amp. B Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation Storage temperature Channel temperature

Symbol VDS ID
±IG1/2SM ±VG1/G2S Ptot Tstg Tch

Value

Unit
-55 150
2006-06-21

BG3123...

Thermal Resistance Parameter Channel - soldering point1

Symbol Rthchs

Value

Unit

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

DC Characteristics

Drain-source breakdown voltage ID = 10 µA, VG1S = 0 V, VG2S = 0 V Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 V, VDS = 0 V Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 V, VDS = 0 V Gate1-source leakage current VG1S = 6 V, VG2S = 0 V Gate2-source leakage current VG2S = 8 V, VG1S = 0 V, VDS = 0 V Drain current VDS = 5 V, VG1S = 0 V, VG2S = V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 60 amp. A

V BR DS
+V BR G1SS 6
+V BR G2SS 6
+IG1SS
50 µA
+IG2SS

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Datasheet ID: BG3123RE6327HTSA1 637690