BFS 466L6 E6327

BFS 466L6 E6327 Datasheet

BFS466L6

Part	Datasheet
BFS 466L6 E6327	BFS 466L6 E6327 (pdf)

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NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package • Built in 2 transitors TR1 die as BFR460L3, TR2 die as BFR360L3 • Low noise figure TR1 1.1dB at GHz TR2 dB at GHz • TR1 with excellent ESD performance typical value > 1500 V HBM • Pb-free RoHS compliant package1 • Qualified according AEC Q101 * Short term description BFS466L6 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFS466L6 Marking Pin Configuration Package 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 1Pb-containing package may be available upon special request 2007-04-26 Maximum Ratings Parameter Collector-emitter voltage TR1, TA > 0 °C TR1, TA 0 °C TR2, TA > 0 °C TR2, TA 0 °C Collector-emitter voltage TR1 TR2 Collector-base voltage TR1 TR2 Emitter-base voltage TR1 TR2 Collector current TR1 TR2 Symbol VCEO VCES VCBO VEBO IC BFS466L6 Value Unit mA 50 35 2007-04-26 BFS466L6 Maximum Ratings Parameter Base current TR1 TR2 Total power dissipation1 TR1, TS 104°C TR2, TS 102°C Junction temperature TR1 TR2 Symbol IB Ptot Value 200 210 Ambient temperature TR1 TR2 TA -65 150 -65 150 Storage temperature TR1 TR2 Tstg -65 150 -65 150 Thermal Resistance Parameter Junction - soldering point2 TR1 Symbol RthJS 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance Value Unit mA mW °C Unit K/W

PDF Datasheet Preview

NPN Silicon RF TWIN Transistor*
• Low voltage/ low current applications
• Ideal for VCO modules and low noise amplifiers
• World's smallest SMD 6-pin leadless package
• Built in 2 transitors TR1 die as BFR460L3,

TR2 die as BFR360L3
• Low noise figure TR1 1.1dB at GHz

TR2 dB at GHz
• TR1 with excellent ESD performance
typical value > 1500 V HBM
• Pb-free RoHS compliant package1
• Qualified according AEC Q101
* Short term description

BFS466L6

ESD Electrostatic discharge sensitive device, observe handling precaution!

Type BFS466L6

Marking

Pin Configuration

Package
1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1
1Pb-containing package may be available upon special request
2007-04-26

Maximum Ratings Parameter Collector-emitter voltage TR1, TA > 0 °C TR1, TA 0 °C TR2, TA > 0 °C TR2, TA 0 °C Collector-emitter voltage TR1 TR2 Collector-base voltage TR1 TR2 Emitter-base voltage TR1 TR2

Collector current TR1 TR2

Symbol VCEO

VCES VCBO VEBO IC

BFS466L6

Value

Unit
mA 50 35
2007-04-26

BFS466L6

Maximum Ratings Parameter Base current TR1 TR2 Total power dissipation1 TR1, TS 104°C TR2, TS 102°C Junction temperature TR1 TR2

Symbol IB

Ptot

Value
200 210

Ambient temperature TR1 TR2

TA -65 150 -65 150

Storage temperature TR1 TR2

Tstg -65 150 -65 150

Thermal Resistance

Parameter Junction - soldering point2 TR1

Symbol RthJS
1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Value

Unit mA mW °C

Unit K/W

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Datasheet ID: BFS466L6E6327 637687