BFS 460L6 E6327
BFS 460L6 E6327 Datasheet
BFS460L6
| Part | Datasheet |
|---|---|
BFS 460L6 E6327 |
BFS 460L6 E6327 (pdf) |
| PDF Datasheet Preview |
|---|
| NPN Silicon RF TWIN Transistor • High fT of 22 GHz • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure dB at GHz • World's smallest SMD 6-pin leadless package • Excellent ESD performance • Built in 2 transistors TR1, TR2 die as BFR460L3 * Short-term description 6 TR1 BFS460L6 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFS460L6 Marking Pin Configuration Package 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Maximum Ratings Parameter Collector-emitter voltage TA > 0 °C TA 0 °C VCEO Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1 TS 104°C Junction temperature Ambient temperature Storage temperature VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1TS is measured on the collector lead at the soldering point to the pcb Value Unit -65 150 -65 150 Jun-15-2004 BFS460L6 Thermal Resistance Parameter Junction - soldering point1 Symbol RthJS Value Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = V, IC = 0 DC current gain IC = 20 mA, VCE = 3 V, pulse measured V BR CEO ICES 10 µA ICBO 100 nA IEBO |
| More datasheets: FCCN410QD3CX0 | FCCN410QD3C05 | FCCN410QD3C03 | FCCN410QD3C20 | FCCN410QD3C01 | FCCN410QD3C15 | FCCN410QD3C10 | 366330026 | DDMZ24H7SN | DBMC-9H4P-J-K127 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BFS460L6E6327 Datasheet file may be downloaded here without warranties.