BFS 386L6 E6327
BFS 386L6 E6327 Datasheet
BFS386L6
| Part | Datasheet |
|---|---|
BFS 386L6 E6327 |
BFS 386L6 E6327 (pdf) |
| PDF Datasheet Preview |
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| NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation For low noise amplifiers For oscillators up to GHz and Pout > 10 dBm Low noise figure TR1 1.0dB at GHz TR2 dB at GHz Built in 2 Transistors TR1 die as BFR360L3, TR2 die as BFR380L3 6 TR1 BFS386L6 P-TSLP-6-1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFS386L6 Marking Pin Configuration Package 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Maximum Ratings Parameter Collector-emitter voltage TR1 TR2 Collector-emitter voltage TR1 TR2 Collector-base voltage TR1 TR2 Emitter-base voltage TR1 TR2 Collector current TR1 TR2 Symbol VCEO VCES VCBO VEBO IC Value 35 80 Unit V Jun-11-2003 BFS386L6 Maximum Ratings Parameter Base current TR1 TR2 Total power dissipation1 TS 101°C, TR1 TS 96°C, TR2 Junction temperature TR1 TR2 Symbol IB Ptot Value 210 380 Ambient temperature TR1 TR2 TA -65 150 -65 150 Storage temperature TR1 TR2 Tstg -65 150 -65 150 Thermal Resistance Parameter Junction - soldering point2 TR1 TR2 Symbol RthJS Value 230 140 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance Unit mA mW °C Unit K/W Jun-11-2003 |
| More datasheets: DDMM-50P-D | DDMM50PA101 | 63811-0200 | 11-01-0185 | 11-01-0198 | 11-01-0008 | 11-01-0197 | 11-01-0084 | 11-01-0006 | MDM-31SH002L |
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