BFR 949T E6327
BFR 949T E6327 Datasheet
BFR949T
| Part | Datasheet |
|---|---|
BFR 949T E6327 |
BFR 949T E6327 (pdf) |
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| NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 9 GHz F = dB at 1 GHz BFR949T 2 1 VPS05996 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking RKs Pin Configuration Package SC75 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 75°C 1 Junction temperature Ambient temperature Storage temperature Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 10 20 35 4 250 150 -65 150 -65 150 Thermal Resistance Junction - soldering point2 RthJS 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance Unit V mA mW °C Aug-09-2001 BFR949T Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V BR CEO 10 Base-emitter forward voltage IE = 25mA Collector-base cutoff current VCB = 10 V, IE = 0 VBEF ICBO - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 6 V IEBO hFE 100 140 200 - Aug-09-2001 BFR949T Electrical Characteristics at TA = 25°C, unless otherwise specified. |
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