BFR 740L3 E6327
BFR 740L3 E6327 Datasheet
BFR740L3
| Part | Datasheet |
|---|---|
BFR 740L3 E6327 |
BFR 740L3 E6327 (pdf) |
| PDF Datasheet Preview |
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| BFR740L3 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = dB at GHz Outstanding noise figure F = dB at 6 GHz • High maximum stable gain Gms = 24 dB at GHz • Gold metallization for extra high reliability • 150 GHz fT-Silicon Germanium technology ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR740L3 Marking Pin Configuration Package TSLP-3-8 Maximum Ratings Parameter Collector-emitter voltage TA > 0°C TA 0°C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1 TS 94°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1TS is measured on the collector lead at the soldering point to the pcb Value Unit -65 150 -65 150 2005-10-17 BFR740L3 Thermal Resistance Parameter Junction - soldering point1 Symbol RthJS Value Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = V, IC = 0 DC current gain IC = 25 mA, VCE = 3 V, pulse measured V BR CEO 4 ICES 30 µA ICBO 100 nA IEBO 3 µA |
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