BF776E6327FTSA1

BF776E6327FTSA1 Datasheet

BF776

Part	Datasheet
BF776E6327FTSA1	BF776E6327FTSA1 (pdf)

Related Parts	Information
BF776H6327XTSA1	BF776H6327XTSA1

PDF Datasheet Preview
High Performance NPN Bipolar RF Transistor • High performance low noise amplifier • Low minimum noise figure of typ. dB GHz • For a wide range of non automotive applications such as WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB, UMTS/LTE and ISM bands • Easy to use standard package with visible leads • Pb-free RoHS compliant package BF776 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BF776 Marking Pin Configuration 1=B 2=E 3=C 4=E - Package SOT343 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1 TS 90°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TA TStg Thermal Resistance Parameter Junction - soldering point2 RthJS 1TS is measured on the emitter lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance Value 13 50 3 200 150 -55 150 -55 150 Value 300 Unit V mA mW °C Unit K/W 2010-04-06 1 BF776 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics

PDF Datasheet Preview

High Performance NPN Bipolar RF Transistor
• High performance low noise amplifier
• Low minimum noise figure of typ. dB GHz
• For a wide range of non automotive applications
such as WLAN, WiMax, UWB, Bluetooth, GPS,

SDARs, DAB, LNB, UMTS/LTE and ISM bands
• Easy to use standard package with visible leads
• Pb-free RoHS compliant package

BF776

ESD Electrostatic discharge sensitive device, observe handling precaution!

Type BF776

Marking

Pin Configuration
1=B 2=E 3=C 4=E -

Package SOT343

Maximum Ratings at TA = 25 °C, unless otherwise specified

Parameter

Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1 TS 90°C Junction temperature Ambient temperature Storage temperature

VCEO

VCES VCBO VEBO IC IB Ptot

TJ TA TStg

Thermal Resistance

Parameter

Junction - soldering point2

RthJS
1TS is measured on the emitter lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Value
13 50 3 200
150 -55 150 -55 150

Value 300

Unit V
mA mW °C

Unit K/W
2010-04-06 1

BF776

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

DC Characteristics

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Datasheet ID: BF776E6327FTSA1 637663