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BF 775 E6327 (pdf) |
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NPN Silicon RF Transistor • Especially suitable for TV-Sat and UHF tuners • Pb-free RoHS compliant package1 • Qualified according AEC Q101 BF775 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BF775 Marking Pin Configuration Package SOT23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation2 TS 48°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Thermal Resistance Parameter Junction - soldering point3 RthJS 1Pb-containing package may be available upon special request 2TS is measured on the collector lead at the soldering point to the pcb 3For calculation of RthJA please refer to Application Note Thermal Resistance Value 15 20 45 4 280 150 -65 150 -65 150 Value 365 Unit V mA mW °C Unit K/W 2007-04-20 BF775 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = V, IC = 0 DC current gainIC = 15 mA, VCE = 8 V, pulse measured V BR CEO 15 ICES 10 µA ICBO 100 nA IEBO 100 µA 70 100 140 - |
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