BF771E6327HTSA1
BF771E6327HTSA1 Datasheet
BF771
| Part | Datasheet |
|---|---|
BF771E6327HTSA1 |
BF771E6327HTSA1 (pdf) |
| PDF Datasheet Preview |
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| NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners • Pb-free RoHS compliant package1 • Qualified according AEC Q101 BF771 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BF771 Marking Pin Configuration Package SOT23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation2 TS 69°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Thermal Resistance Parameter Junction - soldering point3 RthJS 1Pb-containing package may be available upon special request 2TS is measured on the collector lead at the soldering point to the pcb 3For calculation of RthJA please refer to Application Note Thermal Resistance Value 12 20 2 80 10 580 150 -65 150 -65 150 Value 140 Unit V mA mW °C Unit K/W 2007-04-20 BF771 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 30 mA, VCE = 8 V, pulse measured V BR CEO 12 ICES 100 µA ICBO 100 nA IEBO 1 µA |
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