BCV28H6327XTSA1

BCV28H6327XTSA1 Datasheet

• For general AF applications • High collector current • High current gain • Complementary types BCV29, BCV49 NPN • Pb-free RoHS compliant package • Qualified according AEC Q101

Part	Datasheet
BCV28H6327XTSA1	BCV28H6327XTSA1 (pdf)

Related Parts	Information
BCV48H6327XTSA1	BCV48H6327XTSA1
BCV48E6327HTSA1	BCV48E6327HTSA1
BCV 28 E6327	BCV 28 E6327

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PNP Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Complementary types BCV29, BCV49 NPN • Pb-free RoHS compliant package • Qualified according AEC Q101 BCV28, BCV48 Type BCV28 BCV48 Marking ED EE Maximum Ratings Parameter Collector-emitter voltage BCV28 BCV48 Collector-base voltage BCV28 BCV48 Emitter-base voltage Collector current Peak collector current, tp 10 ms Base current Peak base current Total power dissipationTS 130 °C Junction temperature Storage temperature Pin Configuration Package SOT89 Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Value Unit -65 150 2011-10-05 BCV28, BCV48 Thermal Resistance Parameter Value Junction - soldering point1 RthJS 1For calculation of RthJA please refer to Application Note AN077 Thermal Resistance Calculation Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCV28 IC = 10 mA, IB = 0 , BCV48 V BR CEO Collector-base breakdown voltage IC = 100 µA, IE = 0 , BCV28 IC = 100 µA, IE = 0 , BCV48 V BR CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 V BR EBO 10 Collector-base cutoff current VCB = 30 V, IE = 0 , BCV28 VCB = 60 V, IE = 0 , BCV48 VCB = 30 V, IE = 0 , TA 150 °C, BCV28 VCB = 60 V, IE = 0 , TA 150 °C, BCV48 ICBO Emitter-base cutoff current

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PNP Silicon Darlington Transistors
• For general AF applications
• High collector current
• High current gain
• Complementary types BCV29, BCV49 NPN
• Pb-free RoHS compliant package
• Qualified according AEC Q101

BCV28, BCV48

Type BCV28 BCV48

Marking ED EE

Maximum Ratings Parameter Collector-emitter voltage BCV28 BCV48

Collector-base voltage BCV28 BCV48 Emitter-base voltage Collector current Peak collector current, tp 10 ms Base current Peak base current Total power dissipationTS 130 °C Junction temperature Storage temperature

Pin Configuration

Package SOT89

Symbol VCEO

VCBO

VEBO IC ICM IB IBM Ptot

Tj Tstg

Value

Unit
-65 150
2011-10-05

BCV28, BCV48

Thermal Resistance

Parameter

Value

Junction - soldering point1

RthJS
1For calculation of RthJA please refer to Application Note AN077 Thermal Resistance Calculation

Unit K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCV28 IC = 10 mA, IB = 0 , BCV48

V BR CEO

Collector-base breakdown voltage IC = 100 µA, IE = 0 , BCV28 IC = 100 µA, IE = 0 , BCV48

V BR CBO

Emitter-base breakdown voltage IE = 10 µA, IC = 0

V BR EBO 10

Collector-base cutoff current

VCB = 30 V, IE = 0 , BCV28 VCB = 60 V, IE = 0 , BCV48 VCB = 30 V, IE = 0 , TA 150 °C, BCV28 VCB = 60 V, IE = 0 , TA 150 °C, BCV48

ICBO

Emitter-base cutoff current

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Datasheet ID: BCV28H6327XTSA1 637657