BCR519
Part | Datasheet |
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BCR 519 E6327 (pdf) |
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NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit • Built in bias resistor R1= BCR519 Type BCR519 EHA07264 Marking XKs Pin Configuration Package SOT23 Maximum Ratings Parameter Junction temperature Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1 Symbol RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Value 50 30 5 500 330 150 -65 150 Value 215 Unit V mA mW °C Unit K/W 2006-07-06 BCR519 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V BR CEO 50 IC = 100 µA, IB = 0 Collector-base breakdown voltage V BR CBO 50 IC = 10 µA, IE = 0 Collector-base cutoff current VCB = 50 V, IE = 0 I CBO - 100 Emitter-base cutoff current I EBO |
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